BYP 100
Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics
Type BYP 100
VRRM
...
BYP 100
Preliminary data FRED Diode Fast recovery epitaxial diode Soft recovery characteristics
Type BYP 100
VRRM
1000V
IFRMS
8A
trr
55ns
Package TO-218 AD
Ordering Code C67047-A2254-A2
Maximum Ratings Parameter Mean forward current Symbol Values 5 Unit A 8 20
IFAV IFRMS IFSM IFRM
50 ∫i2dt 2
TC = 90 °C, D = 0.5
RMS forward current Surge forward current, sine halfwave, aperiodic
Tj = 100 °C, f = 50 Hz
Repetitive peak forward current
Tj = 100 °C, tp ≤ 10 µs i 2t value Tj = 100 °C, tp = 10 ms
Repetitive peak reverse
voltage Surge peak reverse
voltage Power dissipation
A2s 1000 1000 W 15 -40 ... + 150 -40 ... + 150 ≤ 9.8 ≤ 46 E 40 / 150 / 56 K/W °C V
VRRM VRSM Ptot Tj Tstg RthJC RthJA
-
TC = 90 °C
Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
09.96
BYP 100
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward
voltage drop Values typ. max. Unit
VF
2 1.7 0.01 0.05 0.15 2.45 -
V
IF = 5 A, Tj = 25 °C IF = 5 A, Tj = 100 °C
Reverse current
IR
0.25 -
mA
VR = 1000 V, Tj = 25 °C VR = 1000 V, Tj = 100 °C VR = 1000 V, Tj = 150 °C
AC Characteristics Reverse recovery charge
Qrr
0.8 1.5
µC
IF = 5 A, VCC = 300 V, diF/dt = -800 A/µs Tj = 100 °C
Peak reverse recovery current
IRRM
22 -
A
IF = 5 A, VCC = 300 V, diF/dt = -80...