BYT 11-600 →1000
FAST RECOVERY RECTIFIER DIODES
SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE
APPLICATIONS ANTI...
BYT 11-600 →1000
FAST RECOVERY RECTIFIER DIODES
SOFT RECOVERY VERY HIGH
VOLTAGE SMALL RECOVERY CHARGE
APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE RATINGS (limiting values)
Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp ≤ 20µs Ta = 75°C δ = 0.5 tp = 10ms Sinusoidal Ta = 55°C
F 126 (Plastic)
Value 20 1 35 1.25 - 55 to + 150 - 55 to + 150 230
Unit A A A W °C
°C
Symbol VRRM
Parameter 600 Repetitive Peak Reverse
Voltage 600
BYT 11800 800 1000 1000
Unit V
THERMAL RESISTANCE
Symbol Rth (j - a) Junction-ambient* Parameter Value 60 Unit °C/W
* On infinite heatsink with 10mm lead length.
November 1994
1/4
BYT11-600 → 1000
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Synbol IR VF Tj = 25°C Tj = 25°C Test Conditions VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit µA V
RECOVERY CHARACTERISTICS
Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 100 Unit ns
To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 IF P = 1.1 x IF(AV) + 0.075 IF2(RMS)
F i gu re 1. Ma xi mu m av era ge power dissipation versus average forward current.
Figure 2. Average forward current versus ambient temperature.
Figure 3. Thermal resistance versus lead length.
Mounting n°1 ...
