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BYT13-600

STMicroelectronics

FAST RECOVERY RECTIFIER DIODES

® BYT 13-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ...


STMicroelectronics

BYT13-600

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® BYT 13-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp ≤ 20µs Ta = 55°C δ = 0.5 tp = 10ms Sinusoidal Ta = 55°C DO-201AD (Plastic) Value 50 3 100 3.75 - 40 to + 150 - 40 to + 150 230 Unit A A A W °C °C Symbol VRRM Parameter 600 Repetitive Peak Reverse Voltage 600 BYT 13800 800 1000 1000 Unit V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead length. August 1998 Ed : 1B 1/4 BYT13-600 → 1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR VF Tj = 25°C Tj = 25°C Test Conditions VR = VRRM IF = 3A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 150 Unit ns To evaluate the conduction losses use the following equations: VF = 0.95 + 0.050 IF P = 0.95 x IF(AV) + 0.050 IF2(RMS) F i gu re 1. Max i mum ave ra ge p ower dissipation versus average forward current. Figure 2. Average forward current versus ambient temperature. Figure 3. Thermal resistance versus lead...




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