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BYT28-500 Datasheet

Part Number BYT28-500
Manufacturers NXP
Logo NXP
Description Dual rectifier diodes ultrafast
Datasheet BYT28-500 DatasheetBYT28-500 Datasheet (PDF)

Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BYT28 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.05 V IO(AV) = 10 A trr ≤ 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency sw.

  BYT28-500   BYT28-500






Dual rectifier diodes ultrafast

Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BYT28 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.05 V IO(AV) = 10 A trr ≤ 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT28 series is supplied in the conventional leaded SOT78 (TO220AB) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IO(AV) IFSM PARAMETER CONDITIONS BYT28 Repetitive peak reverse voltage Continuous reverse voltage Tmb ≤ 147˚C Average rectified output current (both diodes conducting)1 Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature square wave; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 10 50 55 150 150 -500 500 500 UNIT V V A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 4.5 3.0 UNIT K/W K/W K/W 1 Neglecting switching a.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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