Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance
BYT28 series
SYMBOL
QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V
a1 1 k 2
a2 3
VF ≤ 1.05 V IO(AV) = 10 A trr ≤ 60 ns SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency sw.
Dual rectifier diodes ultrafast
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance
BYT28 series
SYMBOL
QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V
a1 1 k 2
a2 3
VF ≤ 1.05 V IO(AV) = 10 A trr ≤ 60 ns SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT28 series is supplied in the conventional leaded SOT78 (TO220AB) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IO(AV) IFSM PARAMETER CONDITIONS BYT28 Repetitive peak reverse voltage Continuous reverse voltage Tmb ≤ 147˚C Average rectified output current (both diodes conducting)1 Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature square wave; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 10 50 55 150 150 -500 500 500 UNIT V V A A A ˚C ˚C
Tstg Tj
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 4.5 3.0 UNIT K/W K/W K/W
1 Neglecting switching a.