Sinterglass Diode. BYT56G Datasheet

BYT56G Datasheet PDF


Part Number

BYT56G

Description

Fast Avalanche Sinterglass Diode

Manufacture

Vishay Telefunken

Total Page 4 Pages
Datasheet
Download BYT56G Datasheet



BYT56G
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Very fast rectification and switching diode
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
BYT56M
BYT56M-TR
2500 per 10" tape and reel
BYT56M
BYT56M-TAP
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
BYT56A
BYT56B
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
TYPE DIFFERENTIATION
VR = 50 V; IF(AV) = 3 A
VR = 100 V; IF(AV) = 3 A
VR = 200 V; IF(AV) = 3 A
VR = 400 V; IF(AV) = 3 A
VR = 600 V; IF(AV) = 3 A
VR = 800 V; IF(AV) = 3 A
VR = 1000 V; IF(AV) = 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT56A
BYT56B
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYT56D
BYT56G
BYT56J
BYT56K
BYT56M
Peak forward surge current
Average forward current
tp = 10 ms, half sine wave
On PC board
l = 10 mm
Non repetitive reverse avalanche energy
Junction and storage temperature range
I(BR)R = 0.4 A
SYMBOL
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IF(AV)
IF(AV)
ER
Tj = Tstg
VALUE
50
100
200
400
600
800
1000
80
1.5
3
10
- 55 to + 175
UNIT
V
V
V
V
V
V
V
A
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Junction ambient
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
VALUE
25
70
UNIT
K/W
K/W
Rev. 1.8, 11-Sep-12
1 Document Number: 86032
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYT56G
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Reverse recovery time
IF = 3 A
VR = VRRM
VR = VRRM, Tj = 150 °C
IF = 0.5 A, IR = 1 A, iR = 0.25 A
VF -
IR -
IR -
trr -
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
TYP.
-
-
-
-
MAX.
1.4
5
150
100
UNIT
V
μA
μA
ns
40
30
20 l l
10
TL = constant
0
0 5 10 15 20 25 30
949462
l - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
3.5
VR = VRRM
3.0 half sinewave
2.5 RthJA = 25 K/W
I = 10 mm
2.0
1.5
1.0 RthJA = 70 K/W
PCB: d = 25 mm
0.5
0
0 20 40 60 80 100 120 140 160 180
16366
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
10 Tj = 175 °C
1 Tj = 25 °C
0.1
0.01
0.001
0
16365
0.5 1.0 1.5 2.0 2.5
VF - Forward Voltage (V)
3.0
Fig. 2 - Max. Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
25
16367
50 75 100 125 150
Tj - Junction Temperature (°C)
175
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 11-Sep-12
2 Document Number: 86032
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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