Ultrafast Rectifier
INCHANGE Semiconductor
BYV32-200
FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage C...
Ultrafast Rectifier
INCHANGE Semiconductor
BYV32-200
FEATURES ·High surge capacity ·Low Forward
Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
200
8 16
V A
IFM
Peak Repetitive Forward Current (Rated VR,
Square Wave,20kHz)
Per Diode Leg
16
Nonrepetitive Peak Surge Current
IFSM (Surge applied at rated load conditions halfwave, single phase, 60Hz)
100
A A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
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INCHANGE Semicond...
