BYV32EX-300P
Dual ultrafast power diode
Rev.01 13 March 2019
Product data sheet
1. General description
Ultrafast power...
BYV32EX-300P
Dual ultrafast power diode
Rev.01 13 March 2019
Product data sheet
1. General description
Ultrafast power diode in a SOT186A (TO-220F) plastic package.
2. Features and benefits
Ultra low leakage current High junction temperature up to 175 °C Low on-state loss Fast switching Soft recovery characteristic minimizes power consuming oscillations High reverse surge capability High thermal cycling performance Low thermal resistance
3. Applications
Home appliance power supply Secondary rectification
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Absolute maximum rating
VRRM
repetitive peak reverse
voltage
IF(AV) average forward current δ = 0.5 ; square-wave pulse; Th ≤ 126 °C; per diode; Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Th ≤ 126 °C;
current
square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
forward current
per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode
Symbol Parameter
Conditions
Static characteristics
VF forward
voltage
IF = 10 A; Tj = 25 °C; per diode; Fig. 6
IF = 10 A; Tj = 125 °C; per diode; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; per diode; Fig. 7
Values
Unit
300 V 10 A 20 A 110 A 121 A Min Typ Max Unit
- - 1.25 V - - 1V
- - 25 ns
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information P...