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BYV32EX-300P

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Dual ultrafast power diode

BYV32EX-300P Dual ultrafast power diode Rev.01 13 March 2019 Product data sheet 1. General description Ultrafast power...


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BYV32EX-300P

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Description
BYV32EX-300P Dual ultrafast power diode Rev.01 13 March 2019 Product data sheet 1. General description Ultrafast power diode in a SOT186A (TO-220F) plastic package. 2. Features and benefits Ultra low leakage current High junction temperature up to 175 °C Low on-state loss Fast switching Soft recovery characteristic minimizes power consuming oscillations High reverse surge capability High thermal cycling performance Low thermal resistance 3. Applications Home appliance power supply Secondary rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Th ≤ 126 °C; per diode; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Th ≤ 126 °C; current square-wave pulse IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current per diode; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode Symbol Parameter Conditions Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; per diode; Fig. 6 IF = 10 A; Tj = 125 °C; per diode; Fig. 6 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; per diode; Fig. 7 Values Unit 300 V 10 A 20 A 110 A 121 A Min Typ Max Unit - - 1.25 V - - 1V - - 25 ns WeEn Semiconductors 5. Pinning information Table 2. Pinning information P...




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