Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fas...
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Isolated mounting tab
BYV32F, BYV32EX series
SYMBOL
QUICK REFERENCE DATA VR = 150 V/ 200 V
a1 1 k 2
a2 3
VF ≤ 0.85 V IO(AV) = 12 A IRRM = 0.2 A trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32F series is supplied in the SOT186 package. The BYV32EX series is supplied in the SOT186A package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse
voltage Crest working reverse
voltage Continuous reverse
voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave δ = 0.5; Ths ≤ 95 ˚C t = 25 µs; δ = 0.5; Ths ≤ 95 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature CONDITIONS BYV32F / BYV32EX -40 MIN. -150 150 150 150 12 20 1...