BYV40E

DISCRETE SEMICONDUCTORS DATA SHEET BYV40E series Rectifier diodes ultrafast, rugged Product specification September 1998 NXP Semiconductors Rectifier diodes ultrafast, rugged Product specification BYV40E series FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance low profile surface mounting package SYMBOL a1 1 k2 a2 3 QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.7 V IO(AV) = 1.5 A IRRM = 0.1 A trr ≤ 25 ns GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV40E series is supplied in the SOT223 surface mounting package. PINNING PIN DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode SOT223 4 123 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR IO(AV) IFRM IFSM IRRM IRSM Tstg Tj BYV40E Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Tsp ≤ 120˚C Average rectified output current square wave; δ = 0.5; (both diodes conducting)1 Repetitive peak forward current Tsp t= ≤ 132˚C 25 µs; δ = 0.5; per diode Tsp ≤ 132 ˚C Non-repetitive peak forward tp = 10 ms current per diode tp = 8.3 ms sinusoidal; Tj = 150˚C prior to surge; with reapplied Repetitive peak reverse current per diode Non-repetitive peak reverse cur...