DISCRETE SEMICONDUCTORS
DATA SHEET
BYV42E, BYV42EB series Rectifier diodes ultrafast, rugged
Product specification
Jul...
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV42E, BYV42EB series Rectifier diodes ultrafast, rugged
Product specification
July 1998
NXP Semiconductors
Rectifier diodes ultrafast, rugged
Product specification
BYV42E, BYV42EB series
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance
SYMBOL
a1 1
k2
a2 3
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package. The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION 1 anode 1 (a)
tab
tab
2 cathode (k) 1
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM VRWM VR
Peak repetitive reverse
voltage Crest working reverse
voltage Continuous reverse
voltage
BYV42E / BYV42EB Tmb ≤ 144˚C
-
-150 150
150
150
-200 200
200
200
V V V
IO(AV) IFRM IFSM
Average rectified output current square wave
(both diodes conducting) Repetitive peak forward current
δ t
= =
205.5µ; sT;mδb
≤ =
108 0.5;
˚C
per diode Non-repetitive peak forward
Tmb ≤ 108 ˚C t = 10 ms
curre...