DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D333
BYW28 series Ultra fast low-loss controlled avalanche r...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D333
BYW28 series Ultra fast low-loss controlled avalanche rectifier
Product specification File under Discrete Semiconductors, SC01 1997 Nov 26
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability.
handbook, halfpage
BYW28 series
The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
DESCRIPTION Rugged glass SOD115 package, using a high temperature alloyed construction.
k
a
MAM384
Fig.1 Simplified outline (SOD115) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse
voltage BYW28-500 BYW28-600 VR continuous reverse
voltage BYW28-500 BYW28-600 IF(AV) average forward current Ttp = 85 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7 − − − 500 600 4 V V A − − 5...