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BYW29EX

NXP

Rectifier diodes

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated e...


NXP

BYW29EX

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Description
Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29EX series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) trr IRRM PARAMETER BYW29EXRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time Repetitive peak reverse current MAX. 150 150 0.895 8 25 0.2 MAX. 200 200 0.895 8 25 0.2 UNIT V V A ns A PINNING - SOD113 PIN 1 2 DESCRIPTION cathode anode PIN CONFIGURATION case SYMBOL k 1 a 2 case isolated 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C CONDITIONS MIN. -40 -150 150 150 150 8 7.3 11.3 16 80 88 32 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A A2s A A ˚C ˚C IF(RMS) IFRM IFSM I2t IRRM IRSM Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 106 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinus...




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