Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated e...
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward
voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYW29EX series
QUICK REFERENCE DATA
SYMBOL VRRM VF IF(AV) trr IRRM PARAMETER BYW29EXRepetitive peak reverse
voltage Forward
voltage Forward current Reverse recovery time Repetitive peak reverse current MAX. 150 150 0.895 8 25 0.2 MAX. 200 200 0.895 8 25 0.2 UNIT V V A ns A
PINNING - SOD113
PIN 1 2 DESCRIPTION cathode anode
PIN CONFIGURATION
case
SYMBOL
k 1
a 2
case isolated
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse
voltage Crest working reverse
voltage Continuous reverse
voltage Average forward current1 square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C CONDITIONS MIN. -40 -150 150 150 150 8 7.3 11.3 16 80 88 32 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A A2s A A ˚C ˚C
IF(RMS) IFRM IFSM
I2t IRRM IRSM Tstg Tj
RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 106 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinus...