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BYW51G200

STMicroelectronics

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

® BYW51/F/G/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF...


STMicroelectronics

BYW51G200

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® BYW51/F/G/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS n PRELIMINARY DATASHEET 2 x 10 A 200 V 150 °C 0.85 V 25 ns A1 K A2 n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY INSULATED PACKAGES (ISOWATT220AB / TO-220FP) : Insulation voltage = 2500 V(RMS) Capacitance = 12 pF D 2PAK BYW51G-200 DESCRIPTION Dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FP or D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB/D PAK Tc=120° C Per diode 2 A2 A1 K A1 K A2 TO-220AB BYW51-200 ISOWATT220AB BYW51F-200 Parameter Repetitive peak reverse voltage Value 200 20 10 20 10 20 10 20 100 - 65 to + 150 150 Per device Unit V A A ISOWATT220AB Tc=95° C Tc=85°C Per diode Per device Per diode TO-220FP IFSM Tstg Tj Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Per device tp=10ms sinusoidal A °C °C 1/9 March 2000 - Ed: 3A ...




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