BZD17C24P

BZD17C11P – BZD17C220P Taiwan Semiconductor 0.8W, 11V - 220V Zener Diode FEATURES ● Silicon zener diodes ● Low profile surface-mount package ● Zener and surge current specification ● Low leakage current ● Excellent stability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Voltage regulating ● Reference voltage ● Protection circuit KEY PARAMETERS PARAMETER VALUE UNIT VZ 11 - 220 V Test current IZT 4 - 50 mA Ptot TJ MAX Package 0.8 W 175 °C Sub SMA Configuration Single die MECHANICAL DATA ● Case: Sub SMA ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.019g (approximately) Sub SMA ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Forward voltage @ IF = 0.2A Power dissipation VF 1.2 TL = 80°C 2.3 TA = 25°C(1) Ptot 0.8 Non-repetitive peak pulse power dissipation 100μs square pulse(2) PZSM 300 Junction temperature TJ - 55 to +175 Storage temperature Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. TJ = 25°C prior to surge TSTG - 55 to +175 UNIT V W W W °C °C 1 Version: L2103 BZD17C11P – BZD17C220P Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-lead thermal resistance Junction-to-ambient thermal resistance(1) Notes: 1. Mounted on Cu-Pad size 5mm x 5mm SYMBOL RӨJ...