BZG04-68

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BZG04 series Transient voltage suppressor diodes Preliminary specification Supersedes data of 1996 Jun 10 1996 Sep 19 Philips Semiconductors Preliminary specification Transient voltage suppressor diodes FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability UL 94V-O classified plastic package Transient suppressor stand-off voltage range: 8.2 to 220 V for 32 types Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. BZG04 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. handbook, 4 columns Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. ,, ,, ,, k cathode band a Top view Side view MSA473 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation storage temperature junction temperature CONDITIONS 10/1000 µs exponential pulse (see Fig.4); Tj = 25 °C prior to surge; see also Fig.2 MIN. − MAX. 300 UNIT W Tstg Tj −65 −65 +175 +175 °C °C 1996 Sep 19 2 Philips Semiconductors Preliminary specification Transient voltage suppressor diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.5 A; see Fig.3 MIN. − BZG04 series MAX. 1.2 V UNIT Per type Tj = 25 °C unless otherwise...