BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features • Very sharp reverse characteristic • Low reverse current l...
BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise
LS-34
Applications
Voltage stabilization
QuadroMELF Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Power Dissipation Z-Current Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward
Voltage at IF = 100 mA
Symbol
Ptot IZ Tj TS
Value 500
Ptot / VZ 175
- 65 to + 175
Unit mW mA OC OC
Symbol RthJA
VF
Max. 500
1.5
Unit K/W
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/01/2007
BZT55 Series
Zener
Voltage Range 1)
Dynamic Resistance
Reverse Leakage Current
Type
lZT for
VZT
rzjT rzjK at IZK Ta = 25 OC Ta = 150 OC
mA V
Ω Ω mA µA
µA
BZT55C2V4
5
2.28...2.56
< 85
< 600
1
< 50
< 100
BZT55C2V7
5
2.5...2.9
< 85
< 600
1
< 10
< 50
BZT55C3V0
5
2.8...3.2
< 90
< 600
1
<4
< 40
BZT55C3V3
5
3.1...3.5
< 90
< 600
1
<2
< 40
BZT55C3V6
5
3.4...3.8
< 90
< 600
1
<2
< 40
BZT55C3V9
5
3.7...4.1
< 90
< 600
1
<2
< 40
BZT55C4V3
5
4.0...4.6
< 90
< 600
1
<1
< 20
BZT55C4V7
5
4.4...5.0
< 80
< 600
1
< 0.5
< 10
BZT55C5V1
5
4.8...5.4
< 60
< 550
1
< 0.1
<2
BZT55C5V6
5
5.2...6.0
< 4...