DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pa.
Voltage regulator diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pack • Also available with preformed leads for easy insertion. DESCRIPTION Rugged glass SOD64 package, using a high temperature alloyed
BZW03 series
construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation
a
MAM205
Fig.1 Simplified outline (SOD64) and symbol.
CONDITIONS Ttp = 25 °C; lead length 10 mm; see Fig.2 Tamb = 45 °C; see Fig.2; PCB mounted (see Fig.6)
MIN. − − −
MAX. 6.00 1.75 20 1000 500 +175 +175
UNIT W W W W W °C °C
PZRM PZSM PRSM Tstg Tj
repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Fig.3 10/1000 µs exponential pulse (see Fig.7); Tj = 25 °C prior to surge; see F.