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BZX79B3V9

General Semiconductor

SILICON PLANAR ZENER DIODES

BZX79 SERIES SILICON PLANAR ZENER DIODES DO-35 min. 1.083 (27.5) FEATURES The Zener voltages are graded according to th...


General Semiconductor

BZX79B3V9

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BZX79 SERIES SILICON PLANAR ZENER DIODES DO-35 min. 1.083 (27.5) FEATURES The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request. max. .150 (3.8) max. ∅.079 (2.0) Diodes available in these tolerance series: ±2% BZX79-B ±3% BZX79-F ±5% BZX79-C Cathode Mark min. 1.083 (27.5) max. ∅.020 (0.52) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature 8unless otherwise specified SYMBOL VALUE UNIT Zener Current (see Table “Characteristics”) Power Dissipation at Tamb = 25°C Junction Temperature Storage Temperature Range Continuous Forward Current Peak reverse power dissipation (non-repetitive) tp=100ms, square wave Ptot Tj TS IF PZSM 500(1) -65 to 200 -65 to + 200 250 40 mW °C °C mA Watts Characteristics at Tamb = 25°C SYMBOL MIN. TYP. MAX. UNIT Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA RthJA – – 0.3(1) °C/W VF – – 0.9 Volts NOTES: (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. 12/10/98 BZX79 SERIES ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Type Dynamic resistance at IZ = 1 mA f = 1 kHZ rzj Ω max < 600 < 600 < 600 < 600 < 600 < 600 < 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300(4) 300(4) 325 (...




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