DatasheetsPDF.com

BZX83C36 Datasheet

Part Number BZX83C36
Manufacturers CDIL
Logo CDIL
Description SILIICON PLANAR ZENER DIODES
Datasheet BZX83C36 DatasheetBZX83C36 Datasheet (PDF)

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILIICON PLANAR ZENER DIODES IS/ISO 9002 Lic# QSC/L-000019.3 BZX83C 2V7 to 56V 500mW DO- 35 Glass Axial Package Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the hermetically sealed glass package with double studs provides excellent stability and reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) DESCRIPTION Power Dissipation Junction Temperature Storage Temperature.

  BZX83C36   BZX83C36






Part Number BZX83C36
Manufacturers SEMTECH
Logo SEMTECH
Description SILICON EPITAXIAL PLANAR ZENER DIODES
Datasheet BZX83C36 DatasheetBZX83C36 Datasheet (PDF)

BZX83C SILICON EPITAXIAL PLANAR ZENER DIODES The Zener voltages are graded according to the international E 24 standard. Other tolerances and higher Zener voltages are upon request. Features High reliability Applications Voltage stabilization Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temp.

  BZX83C36   BZX83C36







SILIICON PLANAR ZENER DIODES

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILIICON PLANAR ZENER DIODES IS/ISO 9002 Lic# QSC/L-000019.3 BZX83C 2V7 to 56V 500mW DO- 35 Glass Axial Package Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the hermetically sealed glass package with double studs provides excellent stability and reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) DESCRIPTION Power Dissipation Junction Temperature Storage Temperature Thermal Resistance - Junction to Ambient in free air SYMBOL PTA Tj Tstg Rth(j-a) VALUE 500 175 - 55 to +175 300 UNIT mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Forward Voltage @ IF=200mA VF < 1.2 V Device VZT @ IZT* BZX83C 2V7 BZX83C 3V0 BZX83C 3V3 BZX83C 3V6 BZX83C 3V9 BZX83C 4V3 BZX83C 4V7 BZX83C 5V1 BZX83C 5V6 BZX83C 6V2 BZX83C 6V8 BZX83C 7V5 BZX83C 8V2 BZX83C 9V1 BZX83C 10 BZX83C 11 BZX83C 12 BZX83C 13 BZX83C 15 BZX83C 16 BZX83C 18 BZX83C 20 BZX83C 22 BZX83C 24 BZX83C 27 min (V) 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.40 10.40 11.40 12.40 13.80 15.30 16.80 18.80 20.80 22.80 25.10 rZT @ IZT* IZT max (V) 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.60 11.60 12.70 14.10 15.60 17.10 19.10 21.20 23.30 25.60 28.90 max (Ω) 90 90 90 90 90 80 80 60 40 10 8 7 7 10 15 20 20 25 30 40 55 55 58 80 80 (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5..


2015-03-20 : ILD4001    ILD4035    ILD4120    BZX83C2V7    BZX83C3V0    BZX83C3V3    BZX83C3V6    BZX83C3V9    BZX83C4V3    BZX83C4V7   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)