C106B

C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Sensitive Gate Triggering Device Marking: Device Type, e.g., C106B, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage (Note 1) (Sine Wave, 50–60 Hz, RGK = 1 kΩ, TC = –40° to 110°C) C106B C106D, C106D1 C106M, C106M1 On-State RMS Current (180° Conduction Angles, TC = 80°C) Average On–State Current (180° Conduction Angles, TC = 80°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Average Gate Power (Pulse Width v1.0 µsec, TC = 80°C) Forward Peak Gate Current (Pulse Width v1.0 µsec, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (Note 2) Symbol VDRM, VRRM 200 400 600 IT(RMS) IT(AV) ITSM 4.0 2.55 20 Amps Amps Amps 1 I2t PGM PG(AV) IGM TJ Tstg – 1.65 0.5 0.1 0.2 –40 to +110 –40 to +150 6.0 A2s...