C1157

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC1157 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25? VALUE 110 100 5 0.8 7 -40~150 -40~150 UNIT V V V A W ? ? SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC1157 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A VBEsat Base-emitter saturation voltage IC=300mA IB=30m A V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 V(BR)EBO Emitter-base breakdown voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain fT Transition frequency IE=100µA; IC=0 VCB=110V; IE=0 VEB=5V; IC=0 IC=300mA ; VCE=4V IE=100mA ; VCB=10V MIN TYP. MAX UNIT 1.2 V 1.5 V 110 V 100 V 5V 1.0 µA 1.0 µA 20 300 70 MHz 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specificat...