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C1674 Datasheet

Part Number C1674
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description KSC1674
Datasheet C1674 DatasheetC1674 Datasheet (PDF)

KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz (TYP.) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Ju.

  C1674   C1674






Part Number C1674
Manufacturers TRANSYS Electronics Limited
Logo TRANSYS Electronics Limited
Description 2SC1674
Datasheet C1674 DatasheetC1674 Datasheet (PDF)

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 FEATURE Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current .

  C1674   C1674







KSC1674

KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz (TYP.) • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 20 4 20 250 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE(on) VCE(sat) fT Cob Cc·rbb’ NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Collector-Base Time Constant Noise Figure Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA f=31.9MHz VCE=6V, IC=1mA RS=50Ω, f=100MHz 400 40 0.72 0.1 600 1.2 12 3.0 15 5.0 0.3 Min. 30 20 4 0.1 0.1 240 V V MHz pF ps dB Typ. Max. Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120~ 240 ©2002 Fairchild Semiconductor Co.


2006-09-11 : C1674    63S281    63S281A    63S281    63S281A    63S280    NL2432DR22-11B    63S281N    63S281N    AP89042   


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