DATA SHEET
SILICON TRANSISTOR
2SC1733
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE
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DATA SHEET
SILICON TRANSISTOR
2SC1733
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE
DESCRIPTION
t The 2SC1733 is an NPN silicon epitaxial dual transistor designed
for use in high-frequency differential amplifier applications. Two
c transistor chips equivalent to the 2SC1275 are housed in a package
the same size as TO-18.
du FEATURES High gain bandwidth product: fT = 2 GHz TYP. o Compact package, the same size as TO-18
PACKAGE DIMENSIONS (in millimeters)
φ 5.84 MAX. φ 4.95 MAX.
12.5 MIN. 5.33 MAX.
1.0 0.25
r ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
P PARAMETER
Collector to Base
Voltage
d Collector to Emitter
Voltage e Emitter to Base
Voltage
Collector Current
u Collector Dissipation
Total Power Dissipation
in Junction Temperature t Storage Temperature
SYMBOL RATINGS UNIT
VCBO
30
V
VCEO
14
V
VEBO
3.0
V
IC
50
mA
PC
200 mW/unit
PT
300
mW
Tj
200
˚C
Tstg
–65 to +200 ˚C
n ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
φ 2.54
60˚ 2
1
3
4
1.05
65
60˚
PIN CONNECTIONS 1. 1E 2. 1C
1C 2C
2
5
3. 1B
4. 2B 5. 2C
3 1B
4 2B
6. 2E
1
6
1E 2E
o PARAMETER c Collector Cut-off Current
Emitter Cut-off Current
is DC Current Gain
hFE Ratio
DDifference of Base to Emitter
Voltage
SYMBOL ICES IEBO hFE hFE1/hFE2 ∆VBE
TEST CONDITIONS VCE = 15 V, RBE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA* VCE = 10 V, IC = 10 mA
MIN.
25 0.8
TYP. 80
MAX. 50 50 200 1.0 30
UNIT nA nA
mV
Gain Bandwidth Product
fT
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