General Purpose Transistors
COMCHIP
SMD Diodes Specialist
C1815-G (NPN)
RoHS Device
Features
-Power dissipation P CM =...
General Purpose Transistors
COMCHIP
SMD Diodes Specialist
C1815-G (NPN)
RoHS Device
Features
-Power dissipation P CM =0.2W
0.056(1.40) 0.047(1.20)
SOT-23
0.119(3.00) 0.110(2.80)
3
Marking: HF
Collector 3
0.044(1.10) 0.035(0.90)
1
0.083(2.10) 0.066(1.70)
2
0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20)
1 Base
0.020(0.50) 0.013(0.35)
0.006(0.15) max 0.007(0.20) min
2 Emitter
O
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base
voltage
www.DataSheet4U.com
Symbol
V CBO V CEO V EBO IC PD T J ,T STG
O
Value
-60 -50 -5 150 200 -55 to +150
Unit
V V V mA mW
O
Collector-Emitter
voltage Emitter-Base
voltage Collector current-continuous Total device dissipation Junction and storage temperature range
C
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base breakdown
voltage Collector-Emitter breakdown
voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation
voltage Base-Emitter saturation
voltage Transition frequency
Symbol
V (BR)CBO V (BR)CEO I CBO I CEO I EBO h FE V CE(SAT) V BE(SAT) fT
Conditions
I C =100μA, I E =0 I C =100μA, I B =0 V CB =60V, I E =0 V CE =50V, I B =0 V EB =5V, I C =0 V CE =6V, I C =2mA I C =100mA, I B =10mA I C =100mA, I B =10mA V CE =10V, I C =1mA f=30MHz
Min
60 50
Typ.
Max
Unit
V V
0.1 0.1 0.1 130 400 0.25 1 80
A μA μA
V V MHz
Classification of h FE
Rank Range L 130 ~ 20...
