DatasheetsPDF.com

C1815 Datasheet

Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 2SC1815 Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (I.


Toshiba Semiconductor
C1815.pdf

Preview
Preview

Preview

Toshiba Semiconductor C1815 Datasheet

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 2SC1815 Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Low noise: NF = 1dB (typ.) at f = 1 kHz • Complementary to 2SA1015 (O, Y, GR class) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Base current Collector power dissipation IC 150 mA IB 50 mA JEDEC TO-92 PC 400 mW JEITA SC-43 Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage a.






www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device .


Jiangsu Changjiang Electronics Technology
C1815.pdf

Preview
Preview


Preview

Jiangsu Changjiang Electronics Technology C1815 Datasheet

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -60 -50 -5 150 200 -55-150 Units V V V mA mW ℃ TRANSISTOR (NPN) TO—92 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Output Capacitance Noise Figure Symbol V.






Elektronische Bauelemente C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor FEATURE Power Dissipation MARKING: HF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage.


SeCoS
C1815.pdf

Preview
Preview


Preview

SeCoS C1815 Datasheet

Elektronische Bauelemente C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor FEATURE Power Dissipation MARKING: HF RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation VCBO VCEO VEBO IC Pc 60 50 5 150 200 Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage Collector to Emitter Breakd.








 

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)