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C1815LT1
C1815LT1
FEATURES Power dissipation PCM: 0.2 W (Tamb=25 )
1. 0
TRANSISTOR (NPN)
* “G” Le...
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C1815LT1
C1815LT1
FEATURES Power dissipation PCM: 0.2 W (Tamb=25 )
1. 0
TRANSISTOR (NPN)
* “G” Lead(Pb)-Free
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Collector current ICM: 0.15 A Collector-base
voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150
2. 4 1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Base-emitter saturation
voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN 60 50 0.1 0.1 0.1 130 400 0.25 1 V V TYP MAX UNIT V V
Ic= 100µA, IE=0 Ic = 0.1mA, IB =0 VCB=60V, IE=0 VCE=50V, IB=0 VEB= 5V, IC=0 VCE= 6V, IC= 2mA IC=100 mA, IB= 10mA IC=100 mA, IB= 10mA VCE=10V, IC= 1mA
0. 4
µA µA µA
Transition frequency
fT
f=30MHz
80
MHz
CLASSIFICATION OF hFE(1) Rank Range L 130-200 H 200- 400
DEVICE MARKING
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C1815LT1=HF
WEITRON
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www.DataSheet4U.com
C1815LT1
www.DataSheet4U.com
WEITRON
http://www.weitron.com.tw
www.DataSheet4U.com
C1815LT1
www.DataSheet4U.com
WEITRON
http://www.weitron.com.tw
...