SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220 package ·Collector cu...
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220 package ·Collector current :IC=4A ·Collector power dissipation
:PC=30W@TC=25
APPLICATIONS ·For use in low frequency power
amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Product Specification
2SC1826
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC PC Tj Tstg
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE UNIT 80 V 60 V 6V 4A 30 W 150
-55~150
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1826
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown
voltage IC=25mA ;IB=0
60 V
V(BR)CBO Collector-base breakdown
voltage
IC=1mA ;IE=0
80 V
V(BR)EBO Emitter-base breakdown
voltage
IE=1mA ;IC=0
6V
VCEsat Collector-emitter saturation
voltage IC=3A; IB=0.3A
1.0 V
VBEsat
Base-emitter saturation
voltage
IC=3A ;IB=0.3A
1.5 V
ICBO Collector cut-off current
VCB=80V;IE=0
100 µA
IEBO Emitter cut-off current
VEB=6V; IC=0
100 µA
hFE DC current gain
IC=1A ; VCE=4V
40 320
fT Transition frequency
IC=0.5A ; VCE=12V
10 MHz
2
SavantIC Semiconduc...