Inchange Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION With TO-220 package Complement to typ...
Inchange Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25
APPLICATIONS For use in low frequency power amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Product Specification
2SC1827
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base
voltage
VCEO
Collector-emitter
voltage
VEBO
Emitter-base
voltage
IC Collector current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE UNIT 80 V 80 V 5V 4A 30 W 150
-55~150
Inchange Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown
voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown
voltage
IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown
voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation
voltage IC=3A; IB=0.3A
VBEsat Base-emitter saturation
voltage
IC=3A ;IB=0.3A
ICBO Collector cut-off current
VCB=80V;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=2V
Product Specification
2SC1827
MIN TYP. MAX UNIT 80 V 80 V 5V
1.0 V 1.5 V 10 A 10 A 60 240 8 MHz
2
Inchange Semic...