Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0...
Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0885
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
Low collector-emitter saturation
voltage VCE(sat)
Output of 3 W can be obtained by a complementary pair with 2SA0885
TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base
voltage (Emitter open) VCBO
45
V
n d stag tinue Collector-emitter
voltage (Base open) VCEO
35
V
a e cle con Emitter-base
voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
1
A
n u duct typed Peak collector current
ICP
1.5
A
te tin Pro ed Collector power dissipation
PC
1.2
W
ur tinu 5.0 *
ing fo iscon Junction temperature
in n follow ed d Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
es plan Note) *: With a 100 × 100 × 2 mm Al heat sink
a coed inclucde type, ■ Electrical Characteristics Ta = 25°C ± 3°C
tinu nan Parameter
Symbol
Conditions
M is iscon ainte Collector-base
voltage (Emitter open)
e/D e, m Collector-emitter
voltage (Base open)
D anc typ Collector-base cutoff current (Emitter open)
inten nce Collector-emitter cutoff current (Base open) Ma tena Emitter-base cutoff current (Collector open) main Forward current transfer ratio (planed Collector-emitter saturation
voltage
VCBO VCEO ICBO IC...
