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C1881 Datasheet

Part Number C1881
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SC1881
Datasheet C1881 DatasheetC1881 Datasheet (PDF)

2SC1881(K) Silicon NPN Triple Diffused Application www.DataSheet4U.com High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C.

  C1881   C1881






Part Number C1883CT
Manufacturers NEC
Logo NEC
Description UPC1883CT
Datasheet C1881 DatasheetC1883CT Datasheet (PDF)

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  C1881   C1881







Part Number C1880
Manufacturers SavantIC
Logo SavantIC
Description 2SC1880
Datasheet C1881 DatasheetC1880 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1880 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER www.DataSheet.co.kr CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 2 4 UNIT V V V A A W Collector-base vol.

  C1881   C1881







2SC1881

2SC1881(K) Silicon NPN Triple Diffused Application www.DataSheet4U.com High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 60 60 7 3 6 30 150 –55 to +150 Unit V V V A A W °C °C 2SC1881(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 7 — — 1000 500 Collector to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. VCE(sat) t on t off — — — Typ — — — — — — — 1 5 Max — — 0.2 0.4 — — 1.2 — — V µs µs Unit V V mA mA Test conditions I C = 50 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 30 V, RBE = ∞ VCE = 1.5 V I C = 1.5 A*1 I C = 2.5 A*1 I C = 2.5 A, IB = 20 mA*1 VCC = 11 V, IC = 2 A, I B1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE www.DataSheet4U.com Area of Safe Operation Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) Collector current IC (A) 10 iC (peak) 5 IC max 2 s 0m =1 pw on rati Ope C) DC = 25° (T C 20 1.0 0.5 0.2 0.1 10 Ta = 25°C 1 shot pulse 0 50 100 Case temperat.


2008-09-05 : AN2903    AN2903    ENV-05F-03    ENV-05F-03    ENV-05F-03    SSC-AM101    SSC-AWT722    SSC-CMX2    SSC-D3232SL-88    SSC-ERT801   


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