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C1890

Hitachi Semiconductor

2SC1890

2SC1890, 2SC1890A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2S...


Hitachi Semiconductor

C1890

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Description
2SC1890, 2SC1890A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SA893/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1890, 2SC1890A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1890 90 90 5 50 300 150 –55 to +150 2SC1890A 120 120 5 50 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SC1890 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SC1890A Max — 0.5 — Min 120 — — Typ — — — — — — 200 1.6 2 Max — — 0.5 1200 0.75 0.5 — — 10 V V MHz pF dB Unit V µA µA Test conditions I C = 1 mA, RBE = ∞ VCB = 75 V, IE = 0 VCB = 100 V, IE = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 50 µA, Rg = 50 kΩ, f = 1 kHz Min 90 — — Typ — — — — — — 200 1.6 2 DC current tarnsfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — 1200 250 0.75 0.5 — — 10 — — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Note: D 250 to 500 Cob NF 1. The 2SC1890/A is grouped by hFE as follows. E 400 to 800 F 600 to 1200 See characteristic curves of 2SC1775 and 2SC1775A. 2 2SC1890, 2SC1...




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