C1904

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC1904 DESCRIPTION ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC PD Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 150 150 5 50mA 1 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC1904 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=9 V(BR)CBO Collector-base breakdown voltage IC=10µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA VBEsat Base-emitter saturation voltage IC=10mA ;IB=1mA ICBO Collector cut-off current VCB=140V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=10mA ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=10mA ; VCE=5V MIN TYP. MAX UNIT 150 V 150 V 5V 0.5 V 1.0 V 1 µA 1 µA 35 500 3 pF 70 MHz 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SC1904 Fig.2 Ou...