C1923

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm · Small reverse transfer capacitance: Cre = 0.7 pF (typ.) · Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 20 4 100 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain ICBO IEBO VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 hFE VCE = 6 V, IC = 1 mA (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ. Max Unit ¾ ¾ 0.5 mA ¾ ¾ 0.5 mA 40 ¾ 200 ¾ 0.70 ¾ pF ¾ 550 ¾ MHz ¾ ¾ 30 ps ¾ 2.5 4.0* dB 15 18 ¾ dB 1 2003-03-19 2SC1923 L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 LENGTH Figure 1 NF, Gpe Test Circuit y Parameter (typ.) (1) Common emitter (...