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C1953 Datasheet

Part Number C1953
Manufacturers SavantIC
Logo SavantIC
Description 2SC1953
Datasheet C1953 DatasheetC1953 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SC1953 Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector.

  C1953   C1953






Part Number C1953
Manufacturers Panasonic
Logo Panasonic
Description 2SC1953
Datasheet C1953 DatasheetC1953 Datasheet (PDF)

Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open cir- 1.9±0.1 16.0±1.0 cuited) Cob • A complementary pair with 2SA0914, is optimum for the pre-driver stage of a 60 W to 100 W output amplifier / • TO-126B package which requires no insul.

  C1953   C1953







2SC1953

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SC1953 Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50 100 1.2 150 -55~150 UNIT V V V mA mA W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3mA ICBO Collector cut-off current VCB=100V; IE=0 hFE DC current gain COB Output capacitance IC=10mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz fT Transition frequency IE=-10mA ; VCB=10V Product Specification 2SC1953 MIN TYP. MAX UNIT 150 V 5V 1V 1 µA 90 450 3 pF 70 MHz hFE Classifications QR S 90-155 130-220 185-330 T 260-450 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC1953 Fig.2 Outline dimensions 3.


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