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C1980 Datasheet

Part Number C1980
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SC1980
Datasheet C1980 DatasheetC1980 Datasheet (PDF)

Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO 120 V n d ge. ed Emitter-base voltage.

  C1980   C1980






Part Number C1984L
Manufacturers Secos
Logo Secos
Description 2SC1984L
Datasheet C1980 DatasheetC1984L Datasheet (PDF)

2SC1383L/2SC1384L Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.9±0.2 www.DataSheet4U.com NPN Silicon General Purpose Transistor TO-92L 3 .9 ±0.2 FEATURE Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ (1. 27 Typ. ) 1.

  C1980   C1980







Part Number C1983
Manufacturers Wing Shing Electronic
Logo Wing Shing Electronic
Description 2SC193
Datasheet C1980 DatasheetC1983 Datasheet (PDF)

2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO IC PC Tj Tstg Rating 80 60 3 30 150 -50~150 Unit V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Collector Cutoff Current Collector Cu.

  C1980   C1980







2SC1980

Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO 120 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 2.3±0.2 V le sta ntinu Collector current IC 20 mA a e cyc isco Peak collector current ICP 50 mA life d, d Collector power dissipation PC 250 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 120 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 120 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 1 µA inten ance Forward current t.


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