C2023

2SC2023 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings Symbol VCBO VCEO www.DataSheet4U.net VEBO IC IB PC Tj Tstg 2SC2023 300 300 6 2 0.2 40(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2.5 B C E Application : Series Regulator, Switch, and General Purpose (Ta=25°C) 2SC2023 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V pF 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12A, IE=–0.2A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit mA mA V 16.0±0.7 8.8±0.2 a b ø3.75±0.2 MHz 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL (Ω) 100 IC (A) 1.0 VB2 (V) –5 IB1 (mA) 100 IB2 (mA) –200 ton (µs) 0.3typ tstg (µs) 4.0typ tf (µs) 1.0typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 2 IB 0m =20 A V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E(s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 2 (V CE =4V) Collector Current I C (A) 2 Collector Current I C (A) mp) e Te I 25˚C (C 125˚C 1 (Cas A /s to p B =2 0m I C =1A 0 0 0.1 0.2 2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) (V C E =4V) 200 DC Cur rent Gain h F E DC Cur rent Gain h F E 200 (V C E =4V) ...