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C2235 2SC2235 Datasheet PDF2SC2235 2SC2235 |
| Part Number | C2235 |
|---|---|
| Description | 2SC2235 |
| Feature | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2235
Audio Power Amplifier Applications Driver Stage Am plifier Applications
2SC2235
Unit: mm
• Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characte ristics Symbol Rating Unit Collecto r-base voltage VCBO 120 V Collector -emitter voltage VCEO 120 V Emitter -base voltage VEBO 5 V Collector cu rrent IC 800 mA Base current IB 8 0 mA Collector power dissipation PC 900 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC TO-92MOD Not e1: Using continuousl . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
|
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| Part Number | C2235 |
|---|---|
| Description | 2SC2235 |
| Feature | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2235
Audio Power Amplifier Applications Driver Stage Am plifier Applications
2SC2235
Unit: mm
• Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characte ristics Symbol Rating Unit Collecto r-base voltage VCBO 120 V Collector -emitter voltage VCEO 120 V Emitter -base voltage VEBO 5 V Collector cu rrent IC 800 mA Base current IB 8 0 mA Collector power dissipation PC 900 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC TO-92MOD Not e1: Using continuousl . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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