Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1022
0.40+–...
Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1022
0.40+–00..0150
Unit: mm 0.16+–00..0160
3
1.50–+00..0255 2.8–+00..32
■ Features
0.4±0.2
Optimum for RF amplification of FM/AM radios
5˚
High transition frequency fT Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
1
2
(0.95) (0.95)
1.9±0.1 2.90+–00..0250
(0.65)
/ ■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
c e. d ty Collector-base
voltage (Emitter open) VCBO
30
V
n d stag tinue Collector-emitter
voltage (Base open) VCEO
20
0 to 0.1 1.1–+00..12 1.1–+00..13
V
a e cle con Emitter-base
voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
30
mA
n u duct typed Collector power dissipation
PC
200
mW
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
10˚
Marking Symbol: V
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1
µA
tinue anc Forward current transfer ratio *
hFE VCB = 10 V, IE = −1 mA
70
220
M is con inten Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250
MHz
/Dis ma Noise figure
NF VCB =...