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C2328 Datasheet

Part Number C2328
Manufacturers FGX
Logo FGX
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet C2328 DatasheetC2328 Datasheet (PDF)

C2328 NPN AUDIO POWER AMPIFIER APPLICATIONS *Complement to A928 *Collector Dissipaition PC=1W *3 Watt Output Application ABSOLUTE MAXIMUM RATINGS(TA=25 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO V Emitter -Base Voltage VEBO V Collector Current Ic A Collector Dissipation Pc W Junction Temperature TJ Storage Temperature TSTG -55 ~ +150 ) .

  C2328   C2328






Part Number C2328
Manufacturers Bluecolour
Logo Bluecolour
Description TO-92 Plastic-Encapsulate Transistors
Datasheet C2328 DatasheetC2328 Datasheet (PDF)

TO-92 Plastic-Encapsulate Transistors 2SC2328 TRANSISTOR (NPN) FEATURES z Complement to 2SA928A z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 30 5 2 0.75 167 150 -55~+150 1. Emitter 2. Collector 3. Base TO-.

  C2328   C2328







Part Number C2328
Manufacturers ETC
Logo ETC
Description Silicon NPN Transistor
Datasheet C2328 DatasheetC2328 Datasheet (PDF)

C2328 C2328 Silicon NPN Epitaxial Transistor Description: The C2328 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to A1020 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Co.

  C2328   C2328







NPN EPITAXIAL SILICON TRANSISTOR

C2328 NPN AUDIO POWER AMPIFIER APPLICATIONS *Complement to A928 *Collector Dissipaition PC=1W *3 Watt Output Application ABSOLUTE MAXIMUM RATINGS(TA=25 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO V Emitter -Base Voltage VEBO V Collector Current Ic A Collector Dissipation Pc W Junction Temperature TJ Storage Temperature TSTG -55 ~ +150 ) ELECTRCAL CHARACTERISTICS(TA=25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= 100µA,IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= 10mA,IB=0 V Emitter -Base Breakdown Voltage BVEBO IE= 1mA,IC=0 V Collector Cut-off Current ICBO VCB = 30V,IE=0 nA Emitter Cut-off Current DC Current Gain IEBO VEB = 5V,IC=0, hFE VCE= 2V,IC=500mA, nA Base-Emitter On Voltage VBE(on) VCE= 2V,Ic= 500mA V Collector-Emitter Saturation Voltage VcE(sat) IC= 1.5A,IB=0.03A V Current Gain -Bandwidth product fT VCE = 2V,Ic= 500mA MHZ Output Capacitance COB VCB= 10V,IE= 0,f=1MHZ pF Hfe CLASSIFICAT ION Classification O HFE 100~200 Y 160~320 .


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