DATA SHEET
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC2334 is ...
DATA SHEET
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching
www.DataSheet4U.com regulators, DC/DC converters, and high-frequency power
amplifiers.
ORDERING INFORMATION
Part No. 2SC2334 Package TO-220AB
FEATURES
Low collector saturation
voltage Fast switching speed Complementary transistor: 2SA1010 (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 150 100 7.0 7.0 15 3.5 40 1.5 150 −55 to +150 Unit V V V A A A W W °C °C
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Document No. D14902EJ2V1DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
2002
2SC2334
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Collector to emitter
voltage Symbol VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 C...