SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2660 2SC2660A
DESC...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2660 2SC2660A
DESCRIPTION ·With TO-220 package ·Complement to type 2SA1133/1133A ·High VCEO ·Large PC APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO PARAMETER Collector-base
voltage 2SC2660 VCEO Collector-emitter
voltage 2SC2660A VEBO IC ICM PC Tj Tstg Emitter-base
voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 180 6 2 3 30 150 -55~150 V A A W CONDITIONS Open emitter VALUE 200 150 V UNIT V
Free Datasheet http://www.datasheet4u.net/
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation
voltage Base-emitter on
voltage 2SC2660 IC=5mA ;IB=0 2SC2660A V(BR)CBO V(BR)EBO ICBO IEBO hFE-1 hFE-2 Collector-base breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 VCB=200V;IE=0 VEB=4V; IC=0 IC=0.15A ; VCE=10V IC=0.4A ; VCE=10V CONDITIONS IC=0.5A ;IB=50m A IC=0.4A ; VCE=10V
2SC2660 2SC2660A
SYMBOL VCEsat VBE
MIN
TYP.
MAX 1.0 1.0
UNIT V V
V(BR)CEO
Collector-emitter breakdown
voltage
150 V...