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C2901 Datasheet

Part Number C2901
Manufacturers NEC
Logo NEC
Description 2SC2901
Datasheet C2901 DatasheetC2901 Datasheet (PDF)

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  C2901   C2901






Part Number C2909
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC2909
Datasheet C2901 DatasheetC2909 Datasheet (PDF)

www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol.

  C2901   C2901







Part Number C2905
Manufacturers Mitsubishi Electronics
Logo Mitsubishi Electronics
Description 2SC2905
Datasheet C2901 DatasheetC2905 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  C2901   C2901







Part Number C2904
Manufacturers ASI
Logo ASI
Description 2SC2904
Datasheet C2901 DatasheetC2904 Datasheet (PDF)

2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. FEATURES: • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 22 A VCBO 50 V VCEO 20 V VEBO 4.0 V PDISS 200 W @ TC = 25 °C TJ -55 °C to +175 °C TSTG -55 °C to +175 °C θJC 0.75 °C/W PACKAGE STYLE .500 6L FLG CA 2x ØN FULL R D DIM A B C D E F G H I J K L M N.

  C2901   C2901







2SC2901

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