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C2921 Datasheet

Part Number C2921
Manufacturers Sanken
Logo Sanken
Description 2SC2921
Datasheet C2921 DatasheetC2921 Datasheet (PDF)

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose sAbsolute maximum ratings Symbol 2SC2921 VCBO 160 VCEO 160 VEBO IC IB PC Tj Tstg 5 15 4 150(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SC2921 Unit ICBO VCB=160V 100max µA IEBO VEB=5V 100max µA V(BR)CEO hFE IC=25mA VCE=4V, IC=5A 160min 50min∗ V VCE(sat) IC=5A, IB=0.5A 2.0max.

  C2921   C2921






Part Number C2929
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon NPN Power Transistor
Datasheet C2921 DatasheetC2929 Datasheet (PDF)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base v.

  C2921   C2921







Part Number C2929
Manufacturers ETC
Logo ETC
Description 2SC2929
Datasheet C2921 DatasheetC2929 Datasheet (PDF)

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  C2921   C2921







Part Number C2926
Manufacturers Rohm
Logo Rohm
Description 2SC2926
Datasheet C2921 DatasheetC2926 Datasheet (PDF)

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  C2921   C2921







Part Number C2925
Manufacturers Panasonic
Logo Panasonic
Description 2SC2925
Datasheet C2921 DatasheetC2925 Datasheet (PDF)

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 60 V pe) Collector-emitter voltage (Base open) VCEO 50 V nc d ge. ed ty Emitter-base voltage (Collector open) V.

  C2921   C2921







Part Number C2923
Manufacturers Panasonic
Logo Panasonic
Description Silicon PNP Transistor
Datasheet C2921 DatasheetC2923 Datasheet (PDF)

MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtuincutelidfetcyypceled,sdtaisgceo.ntinued type) MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtuincutelidfetcyypceled,sdtaisgceo.ntinued type) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the pr.

  C2921   C2921







2SC2921

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose sAbsolute maximum ratings Symbol 2SC2921 VCBO 160 VCEO 160 VEBO IC IB PC Tj Tstg 5 15 4 150(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SC2921 Unit ICBO VCB=160V 100max µA IEBO VEB=5V 100max µA V(BR)CEO hFE IC=25mA VCE=4V, IC=5A 160min 50min∗ V VCE(sat) IC=5A, IB=0.5A 2.0max V fT VCE=12V, IE=–2A 60typ MHz COB VCB=10V, f=1MHz 200typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VB2 IB1 (V) (Ω) (A) (V) (mA) 60 12 5 –5 500 IB2 (mA) –500 ton (µs) 0.2typ tstg (µs) 1.5typ tf (µs) 0.35typ External Dimensions MT-200 2-ø3.2±0.1 36.4±0.3 24.4±0.2 6.0±0.2 2.1 9 7 21.4±0.3 20.0min 4.0max a b 2 3 1.05 +0.2 -0.1 0.65 +-00..12 5.45±0.1 5.45±0.1 3.0 +0.3 -0.1 BCE Weight : Approx 18.4g a. Type No. b. Lot No. Collector Current IC(A) 750mA I C– V CE Characteristics (Typical) 15 600mA 500mA 400mA 300mA 200mA 10 150mA 100mA 5 50mA IB=20mA 0 0 12 34 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 15 Collector Current IC(A) –235˚0˚1C2C5(˚CC (asCeasTeeTmepm)p) 2 10 1 IC=10A 5A 0 0 0.2 0.4 0.6 0.8 1.0 Base Current I.


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