C2925

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 60 V pe) Collector-emitter voltage (Base open) VCEO 50 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 15 2.3±0.2 V sta tinu Collector current IC 0.7 A a e cycle iscon Peak collector current ICP 1.5 A life d, d Collector power dissipation PC 750 mW n u duct type Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package in n es follopwlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter c ed in ce ty Collector-base voltage (Emitter open) tinu nan Collector-emitter voltage (Base open) M is iscon ainte Emitter-base voltage (Collector open) e/D e, m Collector-base cutoff current (Emitter open) D anc typ Collector-emitter cutoff current (Base open) inten ance Forward current transfer ratio * Ma ten Collector-emitter saturation voltage main Collector output capacitance ed (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob Conditions IC = 10 µA, ...