DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATUR...
DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER
AMPLIFIERS
FEATURES Ideal for use of high
voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion correction Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base
voltage
VCBO
Collector to emitter
voltage
VCEO
Emitter to base
voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 160
140/160 5.0 500 1.0 1.0 150
−55 to +150
Unit V V V mA A W °C °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE ** VCE = 2.0 V, IC = 100 mA
DC base
voltage
VBE ** VCE = 5.0 V, IC = 20 mA
Collector saturation
voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A
Base saturation
voltage
VBE(sat) ** IC = 1.0 A, IB = 0.2 A
Output capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IE = −20 mA
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
PACKAGE DRAWING (UNIT: mm)
MIN. 100 0.6
30
TYP.
150 0.64 0.32 1.1 13 60
MAX. 200 200 400 0.7 0.7 1.3 30
Unit nA nA
V V V pF MHz
The information in th...