TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2995
FM/AM RF, MIX, OSC, IF High Frequency Amplifier Appl...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2995
FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications
2SC2995
Unit: mm
· High stability oscillation
voltage on FM local oscillator. · Recommend FM/AM RF, MIX, OSC and IF.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 30 4 50 10 200 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Oscillation output
voltage
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE (Note)
VCE = 6 V, IC = 1 mA
Cre fT Cc・rbb’ NF Gpe VOSC
VCE = 6 V, f = 1 MHz VCE = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 100 MHz (Figure 1)
VCC = 6 V, f = 100 MHz (Figure 2)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA ¾ ¾ 0.5 mA
40 ¾ 240
¾ 0.9 1.3 pF 150 350 ¾ MHz ¾ 15 30 ps ¾ 4.0 ¾ dB ¾ 15 ¾ dB ¾ 150 ¾ mV
1 2003-03-19
2SC2995
L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 length
Figure 1 NF, Gpe Test Circuit
L1: 0.8 mmf silver plated ...