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C2M0045170D Datasheet

Part Number C2M0045170D
Manufacturers Wolfspeed
Logo Wolfspeed
Description Silicon Carbide Power MOSFET
Datasheet C2M0045170D DatasheetC2M0045170D Datasheet (PDF)

C2M0045170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen free, RoHS compliant TO-247-3L Package Types: TO-247-3L PN’s: C2M0045170D Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During.

  C2M0045170D   C2M0045170D






Part Number C2M0045170D
Manufacturers Cree
Logo Cree
Description Silicon Carbide Power MOSFET
Datasheet C2M0045170D DatasheetC2M0045170D Datasheet (PDF)

VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Freq.

  C2M0045170D   C2M0045170D







Silicon Carbide Power MOSFET

C2M0045170D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen free, RoHS compliant TO-247-3L Package Types: TO-247-3L PN’s: C2M0045170D Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Applications • Solar inverters • Switch mode power supplies • High voltage DC/DC converters • Motor drive • Pulsed power applications Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Maximum Ratings (TC = 25 °C Unless Otherwise Specified) Parameter Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage Symbol VDSmax VGSmax VGSop Continuous Drain Current ID Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Solder Temperature Mounting Torque ID (pulse) PD TJ, Tstg TL Md Value 1700 -10/+25 -5/+20 75 48 160 338 -40 to +150 260 1 8.8 Unit V A W °C Test Conditions Note VGS = 0 V, ID = 100 μA Absolute Maximum Values, AC (f >1 Hz) Note: 1 Recommended Operational Values Note: 2 VGS = 20 V, TC = 25 °C VGS = 20 V, TC = 100 °C P.


2022-10-08 : CAS350M12BM3    CAB530M12BM3    CAS300M12BM2    C3M0045065K    CPM2-1200-0040A    C3M0120065K    C2M0045170D    C3M0015065K    WAB400M12BM3    CAB4A   


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