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C2M0045170P MOSFET Datasheet PDF

Silicon Carbide Power MOSFET

Silicon Carbide Power MOSFET

 

 

 

Part Number C2M0045170P
Description Silicon Carbide Power MOSFET
Feature VDS 1700 V C2M0045170P Silicon Carb ide Power MOSFET TM C2M MOSFET Technolo gy ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features Package
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High Blocking Vol tage with Low On-Resistance
• High S peed Switching with Low Capacitances Easy to Parallel and Simple to Drive
• Halogen Free, RoHS Compliant TAB Drain Benefits
• Reduce switching losses and minimize gate ringing
• H igher system efficiency
• Reduce coo ling requirements
• Increase power .
Manufacture Cree
Datasheet
Download C2M0045170P Datasheet

C2M0045170P

 

 

 


 

 

 

Part Number C2M0045170P
Description Silicon Carbide Power MOSFET
Feature C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enha ncement Mode Features
• 2n d generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High bloc king voltage with low On-Resistance
• High speed switching with low capacita nces
• Resistant to latch-up
• Halo gen Free, RoHS Compliant Benefits
• R educe switching losses and minimize gat e ringing
• Higher system efficiency
• Reduce cooling requirements
• Inc rease power density
• Increase system switching frequency Package Tab Drai .
Manufacture Wolfspeed
Datasheet
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