VDS 1700 V
C2M0045170P
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ...
VDS 1700 V
C2M0045170P
Silicon Carbide Power
MOSFET TM
C2M
MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
Optimized package with separate driver source pin 8mm of creepage distance between drain and source High Blocking
Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Halogen Free, RoHS Compliant
TAB Drain
Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications 1500V Solar Inverters Switch Mode Power Supplies High
Voltage DC/DC converters Pulsed Power Applications
1 234 D SSG
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Part Number C2M0045170P
Package TO-247-4 Plus
Marking C2M0045170P
Maximum Ratings (TC = 25 ...
