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C2M0045170P MOSFET Datasheet PDFSilicon Carbide Power MOSFET Silicon Carbide Power MOSFET |
　
　
　
| Part Number | C2M0045170P |
|---|---|
| Description | Silicon Carbide Power MOSFET |
| Feature | VDS 1700 V
C2M0045170P
Silicon Carb ide Power MOSFET TM
C2M MOSFET Technolo gy
ID @ 25ËšC
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
• Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High Blocking Vol tage with Low On-Resistance • High S peed Switching with Low Capacitances †¢ Easy to Parallel and Simple to Drive • Halogen Free, RoHS Compliant TAB Drain Benefits • Reduce switching losses and minimize gate ringing • H igher system efficiency • Reduce coo ling requirements • Increase power . |
| Manufacture | Cree |
| Datasheet |
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| Part Number | C2M0045170P |
|---|---|
| Description | Silicon Carbide Power MOSFET |
| Feature | C2M0045170P
Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enha ncement Mode
Features • 2n d generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High bloc king voltage with low On-Resistance • High speed switching with low capacita nces • Resistant to latch-up • Halo gen Free, RoHS Compliant Benefits • R educe switching losses and minimize gat e ringing • Higher system efficiency • Reduce cooling requirements • Inc rease power density • Increase system switching frequency Package Tab Drai . |
| Manufacture | Wolfspeed |
| Datasheet |
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