C3156

SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage : VCBO=900V(Min) ·Fast switching speed. ·Wide area of safe operation www.DataSheet4AUP.cPomLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC3156 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current ICP Collector current-peak PW3300µs, Duty Cycle310% IB Base current PC Collector power dissipation TC=25 Tj Junction temperature Tstg Storage temperature VALUE 900 800 7 6 20 3 120 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC3156 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=A V(BR)CBO www.DataSheet4U.com V(BR)EBO Collector-base breakdown voltage Emitter-base breakdown voltage IC=1mA ; IE=0 IE=1mA ; IC=0 VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.4A ; VCE=5V hFE-2 DC current gain IC=2A ; VCE=5V COB Output capacitanc...