C3225

2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm High DC current gain: hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 40 7 2 0.5 900 150 −55 to 150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCB = 2 V, IC = 100 mA VCB = 10 V, IB = 0, f = 1 MHz Min Typ. Max Unit ― ― 10 µA ― ― 1 µA 40 ― ― V 500 ― ― ― 0.3 0.5 V ― ― 1.1 V ― 220 ― MHz ― 20 ― pF Turn-on time Switching time Storage time Fall time ton 20 µs Input IB1 Output ― 1.0 ― IB1 IB2 100 Ω tstg IB2 VCC = 30 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 3.0 ― µs ...